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| FS01...A/B SENSITIVE GATE SCR TO92 (Plastic) RD26 (Plastic) On-State Current 0.8 Amp Off-State Voltage 200 V / 600 V K G A A G K Gate Trigger Current < 200 A FS01...A FS01...B This series of Silicon Controlled R ectifiers uses a high performance PNPN technology. This part is intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, TL = 60 C Half Cycle, = 180 , TL = 60 C Half Cycle, 60 Hz, Tj = 25 C Half Cycle, 50 Hz, Tj = 25 C t = 10ms, Half Cycle IGR = 10 A 20 s max. 20 s max. 20ms max. Min. 0.8 0.5 8 7 0.24 8 1 2 0.1 +125 +150 260 Max. Unit A A A A A2s V A W W C C C IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL -40 -40 1.6 mm from case, 10s max. PARAMETER Repetitive Peak Off State Voltage CONDITIONS Tj = -40 to +125 C, RGK = 1 K B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Feb - 01 FS01...A/B SENSITIVE GATE SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage On-state slope Resistance Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 1K, Tj = 125 C MAX VR = VRRM , Tj = 25 C MAX at IT = 1.6 Amp, tp = 380 s, Tj = 25 C MAX Tj = 125 C MAX Tj = 125 C MAX VD = 12 VDC , RL = 140, Tj = 25 C MAX MAX IT = 50 mA , RGK = 1K, Tj = 25 C IG = 1 mA , RGK = 1K, Tj = 25 C MAX MIN VD = 0.67 x VDRM , RGK = 1K, Tj = 125 C VD = 12 VDC , RL = 140, Tj = 25 C MIN TYP MAX SENSITIVITY 01 1 20 100 1 1.93 0.95 600 0.8 5 6 75 30 500 200 02 A 200 A V V m V mA mA V/s A/s ns s Unit IGT IDRM / IRRM VTM VT(TO) rT VGT IH IL dv / dt di / dt tgd tq Critical Rate of Current Rise IG = 10 mA, diG/dt = 0.1 A/s, Tj = 125 C Gate Controlled Delay Time IG = 10 mA, diG/dt = 0.1 A/s, Tj = 25 C ITM = 3x IT(AV) VD = VDRM Commutated Turn-Off Time ITM = 3x IT(AV) VR = 35 V di/dt = 10 A/s tp = 100 s dv/dt = 10 V/s Tj = 125 C VD = 67% VDRM RGK = 1K Rth(j-l) Rth(j-a) Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient 80 150 C/W C/W PART NUMBER INFORMATION F FAGOR SCR CURRENT SENSITIVITY S 01 02 B A PACKAGE: A: TO92 B: RD26 VOLTAGE Feb - 01 FS01...A/B SENSITIVE GATE SCR Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1 360 Rth (j-l) Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T lead). P (W) 1 T lead (C) -45 0.8 DC 0.8 Rth (j-a) -65 0.6 = 180 = 120 0.6 -85 0.4 0.4 = 90 0.2 = 60 = 30 IT(AV)(A) 0.2 Tamb (C) -105 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 20 40 60 80 -125 100 120 140 Fig. 3: Average on-state current versus lead temperature I T(AV) (A) 1 DC Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00 0.8 0.6 = 180 0.10 0.4 0.2 T lead (C) tp (s) 0 0 20 40 60 80 100 120 140 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 C) 10.0 9.0 8.0 7.0 6.0 Igt Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8 Tj initial = 25 C Ih (Tj) Ih (Tj = 25 C) 7 6 5 4 3 2 Ih 5.0 4.0 3.0 2.0 1.0 Tj (C) 1 Number of cycles 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1,000 Feb - 01 FS01...A/B SENSITIVE GATE SCR Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100 Tj initial = 25 C Fig. 8: On-state characteristics (maximum values). Fig. 9: Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk = 1k) 5.0 Tj = 25 C ITM(A) 10 Tj initial 25 C Tj max ITSM 10 1.0 1 1 I2 t Tj max Vto = 0.95 V Rt = 0.600 tp(ms) VTM(V) Rgk () 0.1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.1 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS Milimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 REF. A H C D b G a B E F A B C D E F G H a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Marking: type number Weight: 0.2 g PACKAGE MECHANICAL DATA C D RD26 (Plastic) DIMENSIONS Millimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 0.43 0.38 REF. A B C D E F G a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 G a B A 45 E F b Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Marking: type number Weight: 0.2 g Feb - 01 |
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